High power terahertz source

The TeraSense series terahertz source (IMPATTdiode) is a silicon dual drift diode with a transition region of 0.6um, installed on a copper heat sink. The layering of dual offset diodes: heavily doped (p+) layer, moderately doped (p -) layer, moderately doped (n -) layer, and heavily doped (n+) layer. The (p+) and (n+) layers allow Ohmic electrical contacts to make contact with external circuits. The device relies on negative resistance to generate and maintain oscillations.