Wafer Warping and Stress Measurement System

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Overview

Product Details

Product Introduction:

1.Three dimensional warping and nano contour measurement of wafers in the entire field

2.Measurement of wafer thin film stress

3Macroscopic defects of wafers and imaging of film uniformity.

Detection object:

Polishing wafers (silicon, gallium arsenide, silicon carbide, etc.),

Graphic wafer, bonding wafer, packaging wafer

Targeting industries:

Semiconductor wafer manufacturing enterprises,

Semiconductor Process Technology Development

technical parameter

Technical parameters:

Non contact full field wafer warpage measurement	Measurement objects: polished wafers, graphical wafers (circular, square, perforated, etc.)
	Uniform full aperture sampling, minimum sampling interval:0.1mm
	Detection caliber 2 inch- 8inch/12Inch full caliber (adjustable according to demand)
	Automatically output 3D contour, curvature, film stress, and surface defects
	Measurement does not require wafer leveling, single measurement time:10-30s(varying with sampling interval)
3D warping	Range of wafer warpage:200nm - 10mm(Based on wafer size)
	Local resolution of contour measurement:20nm
	Repetitive accuracy of contour measurement:100nm
	Low frequency-High frequency warping software analysis
Thin film surface inspection	Defect detection: cracks, pockmarks, unevenness
Thin film surface inspection	Crack resolution:50um(Resolution can be adjusted according to user needs)
Thin film stress measurement	Measurement range:2MPa–5000MPa
	Repeatability:2MPa
	Relative accuracy:1%
	Sample temperature range: room temperature -300Degree

Measurement Example:

1、8 3D measurement of wafer warpage in inch graphic format

2Surface defect imaging

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